ds21221 rev. d-2 1 of 2 gbj25005-gbj2510 www.diodes.com diodes incorporated features single phase, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. maximum ratings and electrical characteristics @ t a = 25c unless otherwise specified glass passivated die construction high case dielectric strength of 1500v rms low reverse leakage current surge overload rating to 350a peak ideal for printed circuit board applications plastic material - ul flammability classification 94v-0 ul listed under recognized component index, file number e94661 gbj25005 - gbj2510 25a glass passivated bridge rectifier case: molded plastic terminals: plated leads, solderable per mil-std-202, method 208 polarity: molded on body mounting: through hole for #6 screw mounting torque: 5.0 in-lbs maximum weight: 6.6 grams (approx) marking: type number mechanical data gbj dim min max a 29.70 30.30 b 19.70 20.30 c 17.00 18.00 d 3.80 4.20 e 7.30 7.70 g 9.80 10.20 h 2.00 2.40 i 0.90 1.10 j 2.30 2.70 k 3.0 x 45 l 4.40 4.80 m 3.40 3.80 n 3.10 3.40 p 2.50 2.90 r 0.60 0.80 s 10.80 11.20 all dimensions in mm _ b c d ee g h k j i l m n p r s a characteristic symbol gbj 25005 gbj 2501 gbj 2502 gbj 2504 gbj 2506 gbj 2508 gbj 2510 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms reverse voltage v r(rms) 35 70 140 280 420 560 700 v average forward rectified output current (note 1) @ t c = 100c i o 25 a non-repetitive peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (jedec method) i fsm 350 a forward voltage (per element) @ i f = 12.5a v fm 1.05 v peak reverse current @t c = 25c at rated dc blocking voltage @ t c = 125c i r 10 500 a i 2 t rating for fusing (t < 8.3ms) (note 1) i 2 t 510 a 2 s typical junction capacitance (per element) (note 2) c j 85 pf typical thermal resistance junction to case (note 3) r jc 0.6 c/w operating and storage temperature range t j, t stg -65 to +150 c notes: 1. non-repetitive, for t > 1ms and < 8.3 ms. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v dc. 3. thermal resistance from junction to case per element. unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
ds21221 rev. d-2 2 of 2 gbj25005-gbj2510 www.diodes.com 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 v , instantaneous forward voltage (v) f fi g .2 t y pical forward characteristics ( per element ) i , instantaneous forward current (a) f 2.0 100 t = 25c j 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60 hz fi g . 3 maximum non-repetitive sur g e current t = 25c j single half-sine-wave (jedec method) 0 100 200 300 400 1 100 1000 1.0 10 100 c , junction capacitance (pf) j v , reverse voltage (v) r fi g . 4 t y pical junction capacitance 10 t = 25c j f = 1mhz 0.1 1.0 10 100 1000 02040 6080 100 120 140 percent of rated peak reverse voltage (%) fi g .5 t y pical reverse characteristics t = 150c j t = 125c j t = 100c j t = 25c j 0 5 10 15 20 25 30 25 50 75 100 125 150 i , average rectified current (a) o t , case temperature (c) c fi g . 1 forward current deratin g curve resistive or inductive load with heatsink without heatsink
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